V. Senez, T. Hoffmann, E. Robilliart, G. Bouché, H. Jaouen, M. Lunenborg, G. Carnevale
{"title":"Investigations of stress sensitivity of 0.12 CMOS technology using process modeling","authors":"V. Senez, T. Hoffmann, E. Robilliart, G. Bouché, H. Jaouen, M. Lunenborg, G. Carnevale","doi":"10.1109/IEDM.2001.979642","DOIUrl":null,"url":null,"abstract":"This paper presents a mechanical analysis of the entire process flow (i.e.: Front (FEOL) and Back (BEOL) End of Line) of a 0.12 CMOS technology using 2D numerical modeling. This study gives several quantitative modifications concerning the process conditions and device geometries in order to reduce the residual mechanical stress in the devices.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"25 1","pages":"38.1.1-38.1.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979642","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 10
Abstract
This paper presents a mechanical analysis of the entire process flow (i.e.: Front (FEOL) and Back (BEOL) End of Line) of a 0.12 CMOS technology using 2D numerical modeling. This study gives several quantitative modifications concerning the process conditions and device geometries in order to reduce the residual mechanical stress in the devices.
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