The role of silicon, silicon carbide and gallium nitride in power electronics

Abstract

Silicon carbide (SiC) and latest gallium nitride (GaN) are two semiconductor materials which entered the power device arena which has been set up and still is being dominated by silicon based devices. The following paper will make a basic comparison of power devices out of these three base materials valid for medium voltage classes of some hundred to above 1000V. This paper will start with comparisons of common electrical figures of merit (FOM) and will focus less on the exact values but on the possible trends and current limits concerning the different materials. These findings will be brought in relation to application requirements.