H. Schweikardt, M. Lux‐Steiner, M. Vogt, E. Bucher
{"title":"DLTS analysis of WSe/sub 2/ solar cells","authors":"H. Schweikardt, M. Lux‐Steiner, M. Vogt, E. Bucher","doi":"10.1109/PVSC.1988.105979","DOIUrl":null,"url":null,"abstract":"In/p-WSe/sub 2/ and n-ZnO/p-WSe/sub 2/ junctions are investigated by DLTS. In both kinds of diode a dominant trap concentration is observed at 460 meV for unintentionally doped WSe/sub 2/ crystals. Lower trap concentrations are found to be at 200 meV and 300 meV. The devices exhibit temperature-dependent capacities and capture rates. SIMS and laser mass spectrometry analyses reveal that these crystals are mainly contaminated by Mo, Cr, V, Fe, and Cu. DLTS measurements on WSe/sub 2/ crystals that were doped by these elements during the single-crystal growth of ion etching, indicate that the trap at 460 meV may not be due to the detected impurities Mo and Cu.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"41 1","pages":"1594-1597 vol.2"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105979","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
In/p-WSe/sub 2/ and n-ZnO/p-WSe/sub 2/ junctions are investigated by DLTS. In both kinds of diode a dominant trap concentration is observed at 460 meV for unintentionally doped WSe/sub 2/ crystals. Lower trap concentrations are found to be at 200 meV and 300 meV. The devices exhibit temperature-dependent capacities and capture rates. SIMS and laser mass spectrometry analyses reveal that these crystals are mainly contaminated by Mo, Cr, V, Fe, and Cu. DLTS measurements on WSe/sub 2/ crystals that were doped by these elements during the single-crystal growth of ion etching, indicate that the trap at 460 meV may not be due to the detected impurities Mo and Cu.<>
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