Yida Li, A. Alian, Li Huang, K. Ang, D. Lin, D. Mocuta, N. Collaert, A. Thean
{"title":"A Near- & Short-Wave IR Tunable InGaAs Nanomembrane PhotoFET on Flexible Substrate for Lightweight and Wide-Angle Imaging Applications","authors":"Yida Li, A. Alian, Li Huang, K. Ang, D. Lin, D. Mocuta, N. Collaert, A. Thean","doi":"10.1109/VLSIT.2018.8510702","DOIUrl":null,"url":null,"abstract":"We demonstrate an InGaAs nanomembrane field-effect phototransistor with wide-band spectral response tunability, from the visible to near-infrared light. The ultra-thin InGaAs channel (15nm) device, enabled by epitaxial lift-off of InGaAs-on-InP MOSHEMT, is integrated with a fully exposed channel for photosensitivity enhancement. The photocurrent is tunable >5 orders for a gate bias range of 6 V. On-state photo-responsivities of 380 A/W to 15 A/W for 660 nm to 1877 nm light is measured, >2× more sensitive than existing silicon and III-V photodetectors [1]–[3]. The device shows no performance degradation when flexed down to 10-cm radius, showing suitability for conformal surface sensor applications.","PeriodicalId":6561,"journal":{"name":"2018 IEEE Symposium on VLSI Technology","volume":"12 1","pages":"159-160"},"PeriodicalIF":0.0000,"publicationDate":"2018-06-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 IEEE Symposium on VLSI Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/VLSIT.2018.8510702","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1
Abstract
We demonstrate an InGaAs nanomembrane field-effect phototransistor with wide-band spectral response tunability, from the visible to near-infrared light. The ultra-thin InGaAs channel (15nm) device, enabled by epitaxial lift-off of InGaAs-on-InP MOSHEMT, is integrated with a fully exposed channel for photosensitivity enhancement. The photocurrent is tunable >5 orders for a gate bias range of 6 V. On-state photo-responsivities of 380 A/W to 15 A/W for 660 nm to 1877 nm light is measured, >2× more sensitive than existing silicon and III-V photodetectors [1]–[3]. The device shows no performance degradation when flexed down to 10-cm radius, showing suitability for conformal surface sensor applications.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
