InP/InGaAs DHBTs with 341-GHz f/sub T/ at high current density of over 800 kA/cm/sup 2/

International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224) Pub Date : 2001-12-02 DOI:10.1109/IEDM.2001.979630
M. Ida, K. Kurishima, N. Watanabe, T. Enoki
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引用次数: 17

Abstract

We describe MOVPE-grown InP/InGaAs DHBTs with a 150-nm-thick collector. The collector current blocking at the base/collector heterointerface is perfectly suppressed by the compositionally step-graded structure even at collector current density of over 1000 kA/cm/sup 2/. A cut-off frequency f/sub T/ of 341 GHz is obtained at high collector current density of 833 kA/cm/sup 2/ with practical on-state breakdown characteristics. This is the highest f/sub T/ every reported for any bipolar transistors.
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在超过800 kA/cm/sup /的高电流密度下，具有341 ghz f/sub / T的InP/InGaAs dhbt
我们描述了具有150nm厚收集器的movpe生长的InP/InGaAs dhbt。即使在集电极电流密度超过1000 kA/cm/sup /时，集电极电流在基极/集电极异质界面处的阻塞也被组成阶梯式梯度结构完全抑制。在高集电极电流密度为833 kA/cm/sup 2/时，获得了341 GHz的截止频率f/sub /，具有实用的导态击穿特性。这是任何双极晶体管报道的最高f/ T/ every。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)
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