Hans Reisinger, G. Steinlesberger, S. Jakschik, M. Gutsche, T. Hecht, M. Leonhard, Uwe Schröder, H. Seidl, D. Schumann
{"title":"A comparative study of dielectric relaxation losses in alternative dielectrics","authors":"Hans Reisinger, G. Steinlesberger, S. Jakschik, M. Gutsche, T. Hecht, M. Leonhard, Uwe Schröder, H. Seidl, D. Schumann","doi":"10.1109/IEDM.2001.979481","DOIUrl":null,"url":null,"abstract":"This work is intended to draw attention to the effect of dielectric relaxation which is shown to severely influence the performance of alternative dielectrics in DRAM storage capacitors as well as of the gate dielectrics of MOSFETs. A comparison of the dielectric relaxation losses in standard insulators with those in most proposed high K dielectrics is presented.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"23 1","pages":"12.2.1-12.2.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"60","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979481","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 60
Abstract
This work is intended to draw attention to the effect of dielectric relaxation which is shown to severely influence the performance of alternative dielectrics in DRAM storage capacitors as well as of the gate dielectrics of MOSFETs. A comparison of the dielectric relaxation losses in standard insulators with those in most proposed high K dielectrics is presented.
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