3D-MiM (MUST-in-MUST) Technology for Advanced System Integration

A. Su, T. Ku, C. Tsai, K. Yee, Douglas C. H. Yu
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引用次数: 7

Abstract

An advanced 3D Multi-stack (MUST) system integration technology, 3D MUST-in-MUST (3D-MiM) fan out package, has been developed as next generation wafer-level fan-out package technology. 3D-MiM technology utilizes a more simplified architecture which eliminates BGAs between packages for system-level performance, power and form-factor (PPA) purpose. This technology also makes use of a modularized approach for both design and integration flow to improve design flexibility and integration efficiency. Known-good pre-stacked memory cube and/or logic-memory cubes are fabricated by leveraging the established integrated fan-out technology platform (InFO) in tools, materials, design rules, and processes to shorten development cycle time and achieve cost effectiveness. Two 3D-MiM fan-out examples are presented in this paper. The first 3D-MiM package integrates a SoC with 16 memory chips in a 15x15 mm2 footprint with 0.5 mm package height (final BGA included) for mobile application. The other 3D-MiM package integrates 8 SoCs with 32 memory chips in a 43x28 mm2 footprint to mimic a system integration of multiple logic cores and multiple memory chips for HPC applications.
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用于先进系统集成的3D-MiM (MUST-in-MUST)技术
作为先进的3D多堆叠(MUST)系统集成技术,3D MUST-in-MUST (3D- mim)扇出封装已被开发为下一代晶圆级扇出封装技术。3D-MiM技术采用更简化的架构,消除了封装之间的bga,以实现系统级性能、功耗和外形因素(PPA)的目的。该技术还对设计和集成流程采用模块化方法,以提高设计灵活性和集成效率。通过在工具、材料、设计规则和流程中利用已建立的集成扇出技术平台(InFO)来制造已知的预堆叠内存立方体和/或逻辑内存立方体,以缩短开发周期时间并实现成本效益。本文给出了两个3D-MiM扇出的实例。第一个3D-MiM封装集成了一个SoC和16个内存芯片,占地面积为15x15mm2,封装高度为0.5 mm(包括最终BGA),适用于移动应用。另一款3D-MiM封装集成了8个soc和32个存储芯片,占地面积为43x28mm2,模拟了HPC应用的多个逻辑核心和多个存储芯片的系统集成。
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