{"title":"A study on the surface reaction in the growth of amorphous silicon by intermittent deposition method","authors":"T. Ishimura, Y. Okayasu, H. Yamamoto, K. Fukui","doi":"10.1109/PVSC.1988.105669","DOIUrl":null,"url":null,"abstract":"The surface reaction in the glow discharge plasma growth of a-Si:H for solar cells was studied by the intermittent deposition method in which two kinds of gases are exchanged at short intervals; one is used for growing silicon film: the other for modifying the growing surface. It was found that the fluorine elimination process has an activation energy of 7 meV and that fluorine in the region of 8 A below the growing surface is removed by hydrogen radicals at 250 degrees C. The Si:H prepared by this method has a high photoconductivity of 4*10/sup -4/ ( Omega -cm)/sup -1/ under AM1 100-mW/cm/sup 2/ light and a high photosensitivity of 10/sup 6/. This film shows smaller photodegradation than conventional a-Si:H.<<ETX>>","PeriodicalId":10562,"journal":{"name":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","volume":"3 1","pages":"114-118 vol.1"},"PeriodicalIF":0.0000,"publicationDate":"1988-01-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Record of the Twentieth IEEE Photovoltaic Specialists Conference","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/PVSC.1988.105669","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
Abstract
The surface reaction in the glow discharge plasma growth of a-Si:H for solar cells was studied by the intermittent deposition method in which two kinds of gases are exchanged at short intervals; one is used for growing silicon film: the other for modifying the growing surface. It was found that the fluorine elimination process has an activation energy of 7 meV and that fluorine in the region of 8 A below the growing surface is removed by hydrogen radicals at 250 degrees C. The Si:H prepared by this method has a high photoconductivity of 4*10/sup -4/ ( Omega -cm)/sup -1/ under AM1 100-mW/cm/sup 2/ light and a high photosensitivity of 10/sup 6/. This film shows smaller photodegradation than conventional a-Si:H.<>
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