G. Hellings, H. Mertens, A. Subirats, E. Simoen, T. Schram, L. Ragnarsson, Marko Simicic, S.-H. Chen, B. Parvais, D. Boudier, B. Crețu, J. Machillot, V. Peña, S. Sun, N. Yoshida, N. Kim, A. Mocuta, D. Linten, N. Horiguchi
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引用次数: 11
Abstract
This work presents Si/SiGe superlattice finFETs (FF) for 1.8V/2.5V I/O applications in vertically-stacked Gate-All-Around horizontal nanowire technology (hNW) technology. Superlattice FF have a higher ION than I/O hNW reference devices and can be more easily integrated into a GAA hNW technology than Si I/O FF. These novel I/O FET structures exhibit competitive analog performance and are superior as ESD protection devices.
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