{"title":"Degradation of current drivability by the increase of Zr concentrations in Zr-silicate MISFET","authors":"T. Yamaguchi, H. Satake, N. Fukushima","doi":"10.1109/IEDM.2001.979595","DOIUrl":null,"url":null,"abstract":"Zr-silicate thin films with different Zr concentrations, fabricated by low impact pulsed laser ablation deposition, have identically thin interface layers and smooth Si interfaces. By using these Zr-silicate samples, the influence of Si interface properties and that of bulk charges in the Zr-silicate on current drivability were distinguished for the first time. It was found that bulk charges in the Zr-silicate dielectrics greatly affect the current drivability of MISFETs, even if the interface-state density is small.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"122 1","pages":"30.4.1-30.4.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"8","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979595","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 8
Abstract
Zr-silicate thin films with different Zr concentrations, fabricated by low impact pulsed laser ablation deposition, have identically thin interface layers and smooth Si interfaces. By using these Zr-silicate samples, the influence of Si interface properties and that of bulk charges in the Zr-silicate on current drivability were distinguished for the first time. It was found that bulk charges in the Zr-silicate dielectrics greatly affect the current drivability of MISFETs, even if the interface-state density is small.
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