Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm

N. Munzenrieder, L. Petti, C. Zysset, G. Salvatore, T. Kinkeldei, C. Perumal, C. Carta, F. Ellinger, G. Troster
{"title":"Flexible a-IGZO TFT amplifier fabricated on a free standing polyimide foil operating at 1.2 MHz while bent to a radius of 5 mm","authors":"N. Munzenrieder, L. Petti, C. Zysset, G. Salvatore, T. Kinkeldei, C. Perumal, C. Carta, F. Ellinger, G. Troster","doi":"10.1109/iedm.2012.6478982","DOIUrl":null,"url":null,"abstract":"We present flexible common source and cascode amplifiers fabricated on a free-standing plastic foil, using amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFTs with minimum channel lengths of 2.5 μm. Amplifiers are operated at a supply voltage VDD of 5 V, and exhibit maximum cutoff frequencies fC of 1.2 MHz. The circuits stay fully operational while bent to a tensile radius of 5 mm, and after 1000 cycles of repeated bending and re-flattening. To our knowledge, these are the fastest flexible oxide semiconductor based amplifiers.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"22 1","pages":"5.2.1-5.2.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"63","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/iedm.2012.6478982","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 63

Abstract

We present flexible common source and cascode amplifiers fabricated on a free-standing plastic foil, using amorphous-Indium-Gallium-Zinc-Oxide (a-IGZO) TFTs with minimum channel lengths of 2.5 μm. Amplifiers are operated at a supply voltage VDD of 5 V, and exhibit maximum cutoff frequencies fC of 1.2 MHz. The circuits stay fully operational while bent to a tensile radius of 5 mm, and after 1000 cycles of repeated bending and re-flattening. To our knowledge, these are the fastest flexible oxide semiconductor based amplifiers.
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柔性a- igzo TFT放大器制造在独立的聚酰亚胺箔工作在1.2 MHz,而弯曲到5毫米的半径
我们提出了在独立塑料箔上制造的柔性共源和级联放大器,使用最小通道长度为2.5 μm的非晶铟镓锌氧化物(a- igzo) tft。放大器在5 V的电源电压VDD下工作,并显示出1.2 MHz的最大截止频率fC。当弯曲到5毫米的拉伸半径,并经过1000次重复弯曲和重新平坦后,电路保持完全运行。据我们所知,这些是最快的柔性氧化物半导体放大器。
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