J. Ryckaert, P. Schuddinck, P. Weckx, G. Bouche, B. Vincent, J. Smith, Y. Sherazi, A. Mallik, H. Mertens, S. Demuynck, T. H. Bao, A. Veloso, N. Horiguchi, A. Mocuta, D. Mocuta, J. Boemmels
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引用次数: 62
Abstract
The complementary FET (CFET) device consisting of a stacked n-type vertical sheet on a p-type fin is evaluated in a design-technology co-optimization (DTCO) framework. Through a double level access it offers a structural scaling of both standard cells (SDC) and SRAM by 50%. The proposed process flow requires accurate control of the elevation dimension for manufacturability. Based on TCAD analysis, the CFET can eventually outperform the finFET device and meet the N3 targets in power and performance. To achieve that, the dominating parasitic resistance of the deep vias needs to be reduced by the introduction of advanced MOL contacts featuring thin barriers.
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