R. Van Langevelde, A. Scholten, R. Duffy, F. Cubaynes, M. J. Knitel, D. Klaassen
{"title":"Gate current: Modeling, /spl Delta/L extraction and impact on RF performance","authors":"R. Van Langevelde, A. Scholten, R. Duffy, F. Cubaynes, M. J. Knitel, D. Klaassen","doi":"10.1109/IEDM.2001.979486","DOIUrl":null,"url":null,"abstract":"In this paper a new physical gate leakage model is introduced, which is both accurate and simple. It only uses 5 parameters, making parameter extraction straightforward. As a result the model can be used to extract effective length for modern CMOS technologies. The influence of gate current on the RF performance is studied.","PeriodicalId":13825,"journal":{"name":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","volume":"4 1","pages":"13.2.1-13.2.4"},"PeriodicalIF":0.0000,"publicationDate":"2001-12-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"44","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"International Electron Devices Meeting. Technical Digest (Cat. No.01CH37224)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2001.979486","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 44
Abstract
In this paper a new physical gate leakage model is introduced, which is both accurate and simple. It only uses 5 parameters, making parameter extraction straightforward. As a result the model can be used to extract effective length for modern CMOS technologies. The influence of gate current on the RF performance is studied.
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