10μW/cm2-Class High Power Density Planar Si-Nanowire Thermoelectric Energy Harvester Compatible with CMOS-VLSI Technology

2018 IEEE Symposium on VLSI Technology Pub Date : 2018-06-01 DOI:10.1109/VLSIT.2018.8510659
M. Tomita, S. Oba, Y. Himeda, R. Yamato, K. Shima, T. Kumada, M. Xu, H. Takezawa, K. Mesaki, K. Tsuda, S. Hashimoto, T. Zhan, H. Zhang, Y. Kamakura, Y. Suzuki, H. Inokawa, H. Ikeda, T. Matsukawa, T. Matsuki, T. Watanabe
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引用次数: 6

Abstract

A best benchmark of Si-nanowire (NW) thermoelectric (TE) power generator has been achieved by our proposed planar device architecture compatible with CMOS process technology. The TE power density corresponds to 12 μW/cm2, which is recorded at an externally applied temperature difference of only 5 K. The demonstration opens up a pathway to cost effective autonomous internet of things (IoT) application utilizing environmental and body heats.
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兼容CMOS-VLSI技术的10μW/cm2级高功率密度平面硅纳米线热电能量采集器
采用与CMOS工艺技术兼容的平面器件结构，实现了硅纳米线热电发电机的最佳基准测试。TE的功率密度为12 μW/cm2，在外加温差仅为5 K的情况下测得。此次示范为利用环境和人体热量，实现具有成本效益的自主物联网(IoT)应用开辟了道路。
本文章由计算机程序翻译，如有差异，请以英文原文为准。
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2018 IEEE Symposium on VLSI Technology
2018 IEEE Symposium on VLSI Technology
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