{"title":"RRAM SET speed-disturb dilemma and rapid statistical prediction methodology","authors":"Wun-Cheng Luo, Jen-Chieh Liu, Hsien-Tsung Feng, Yen-Chuan Lin, Jiun-Jia Huang, Kuan-Liang Lin, T. Hou","doi":"10.1109/IEDM.2012.6479012","DOIUrl":null,"url":null,"abstract":"This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"25 1","pages":"9.5.1-9.5.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"23","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479012","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 23
Abstract
This paper presents a first comprehensive study of SET speed-disturb dilemma in RRAM using statistically-based prediction methodologies. A rapid ramped-voltage stress based on percolation model and power-law V-t dependence showed excellent agreement with the time-consuming constant-voltage stress, and was applied to evaluate current status of RRAM devices in the literature.
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