Sungkwon Hong, Yaohui Zhang, Y. Luo, T. Suligoj, Seong-Dong Kim, J. Woo, R. Li, B. Min, B. Hradsky, A. Vandooren, B. Nguyen, K. Wang
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引用次数: 3
Abstract
A novel method for accurate gate length extraction has been developed using direct tunneling current (DTC) through thin gate oxide. Applied to decanano CMOS devices, the proposed method is verified to be free from a severe assumption of unified effective mobility that is one of limitations of conventional method to sub-0.1 /spl mu/m. The DTC method is also insensitive to doping concentration and gate oxide thinning effect at the corner regions. In addition, we have studied the channel length dependence on gate line-edge roughness by comparing the DTC method and the conventional channel current method.
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