T. Uematsu, M. Ida, K. Hane, Y. Hayashi, T. Saitoh
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引用次数: 8
Abstract
A novel cell structure with aligned V-grooves on each side is proposed to realize very thin silicon solar cells. The thickness can be less than 50 mu m without reduction of mechanical strength. This structure provides a very high light-trapping effect. The light-generated current in this structure is calculated as 40.58 mA/cm/sup 2/ under AM1.5 100 mW/cm/sup 2/ sunlight. This structure is expected to realize high efficiency, close to the limiting efficiency of around 29% and to yield fruitful results in concentrator cells.<>
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