E. Vianello, G. Molas, F. Longnos, P. Blaise, E. Souchier, C. Cagli, G. Palma, J. Guy, M. Bernard, M. Reyboz, G. Rodriguez, A. Roule, C. Carabasse, V. Delaye, V. Jousseaume, S. Maitrejean, G. Reimbold, B. De Salvo, F. Dahmani, P. Verrier, D. Bretegnier, J. Liebault
{"title":"Sb-doped GeS2 as performance and reliability booster in Conductive Bridge RAM","authors":"E. Vianello, G. Molas, F. Longnos, P. Blaise, E. Souchier, C. Cagli, G. Palma, J. Guy, M. Bernard, M. Reyboz, G. Rodriguez, A. Roule, C. Carabasse, V. Delaye, V. Jousseaume, S. Maitrejean, G. Reimbold, B. De Salvo, F. Dahmani, P. Verrier, D. Bretegnier, J. Liebault","doi":"10.1109/IEDM.2012.6479145","DOIUrl":null,"url":null,"abstract":"In this work, for the first time at our knowledge, the improvement of chalcogenide-based CBRAM performance and reliability by Sb doping of the GeS2 electrolyte is presented. An original analysis, based on in-depth physico-chemical characterization, device electrical measurements, empirical model and first principle calculations, is shown. We argue that optimized ~10% Sb doping in the GeS2 electrolyte allows to achieve SET speed of 30ns at 2.2V (i.e. 0.66pJ SET programming power), while assuring 10 years data retention at 125°C, >105 cycling and high robustness to Sn-Pb soldering profile. Finally, the improved thermal stability of the filament in the GeS2-Sb matrix is clearly elucidated by means of molecular dynamics calculations.","PeriodicalId":6376,"journal":{"name":"2012 International Electron Devices Meeting","volume":"48 1","pages":"31.5.1-31.5.4"},"PeriodicalIF":0.0000,"publicationDate":"2012-12-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"44","resultStr":null,"platform":"Semanticscholar","paperid":null,"PeriodicalName":"2012 International Electron Devices Meeting","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IEDM.2012.6479145","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 44
Abstract
In this work, for the first time at our knowledge, the improvement of chalcogenide-based CBRAM performance and reliability by Sb doping of the GeS2 electrolyte is presented. An original analysis, based on in-depth physico-chemical characterization, device electrical measurements, empirical model and first principle calculations, is shown. We argue that optimized ~10% Sb doping in the GeS2 electrolyte allows to achieve SET speed of 30ns at 2.2V (i.e. 0.66pJ SET programming power), while assuring 10 years data retention at 125°C, >105 cycling and high robustness to Sn-Pb soldering profile. Finally, the improved thermal stability of the filament in the GeS2-Sb matrix is clearly elucidated by means of molecular dynamics calculations.
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