Study on copper plating solutions for fast filling of through silicon via (TSV) in 3D electronic packaging

H. Wu, S. Lee
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引用次数: 9

Abstract

Copper electrodeposition in acidic cupric methanesulfonate electrolyte with organic additives was discussed in this study. The influence of the additives in acidic cupric methanesulfonate bath was studied by means of electrochemical measurement using a rotary electrode and actual TSV copper depositions. The electrochemical parameters including exchange current density and cathodic transfer coefficient of base cupric methanesulfonate electrolyte were successfully determined. Chronoamperometry (CA) was conducted to verify the diffusion time of additives to the surface of electrodes and the corresponding diffusion constants were characterized.
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三维电子封装中硅通孔(TSV)快速填充镀铜方案的研究
研究了含有机添加剂的酸性甲磺酸铜电解液中铜的电沉积。通过旋转电极电化学测量和TSV实际铜沉积,研究了添加剂对酸性甲烷磺酸铜浴的影响。成功地测定了碱型甲基磺酸铜电解质的交换电流密度和阴极转移系数等电化学参数。用计时电流法(CA)验证了添加剂在电极表面的扩散时间,并对相应的扩散常数进行了表征。
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