W. J. Wang, D. Loke, L. Law, L. P. Shi, R. Zhao, M. Li, L. L. Chen, H. Yang, Y. Yeo, A. Adeyeye, T. Chong, A. Lacaita
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引用次数: 14
Abstract
Phase-change memory (PCM) represents one of the best candidates for a “universal memory”. However, its slow SET speed, high RESET power, and high resistance drift present key challenges towards this ambition. Here, grain-engineered Ge2Sb2Te5 is exploited to control the crystallization kinetics, and electrical properties of PCM. We report 120 % higher SET speeds with respect to conventional scaling. Good stability (140°C), 30 % RESET power reduction, and 2X lower resistance drift were also achieved. A 4-state/2-bit multilevel cell was further demonstrated. This provides a route to making high-density PCM devices.
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