对高温贮存后的短期失效进行详细的包装失效分析

Z. Oh, F. Foo, W. Qiu
{"title":"对高温贮存后的短期失效进行详细的包装失效分析","authors":"Z. Oh, F. Foo, W. Qiu","doi":"10.1109/IPFA.2014.6898174","DOIUrl":null,"url":null,"abstract":"This paper describes the failure analysis approach in search of the root cause behind a series of short failures after high-temperature storage (HTS) test at 150°C. Findings revealed that UBM consumption by tin and the eventual disintegration allowed solder diffusion into the die circuitries resulting in the massive short failures.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"27 2","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Detailed package failure analysis on short failures after high temperature storage\",\"authors\":\"Z. Oh, F. Foo, W. Qiu\",\"doi\":\"10.1109/IPFA.2014.6898174\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"This paper describes the failure analysis approach in search of the root cause behind a series of short failures after high-temperature storage (HTS) test at 150°C. Findings revealed that UBM consumption by tin and the eventual disintegration allowed solder diffusion into the die circuitries resulting in the massive short failures.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"27 2\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898174\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898174","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 1

摘要

本文介绍了在150°C高温储存(HTS)试验后寻找一系列短失效的根本原因的失效分析方法。研究结果表明,锡对UBM的消耗和最终的分解使焊料扩散到模具电路中,导致大量的短故障。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Detailed package failure analysis on short failures after high temperature storage
This paper describes the failure analysis approach in search of the root cause behind a series of short failures after high-temperature storage (HTS) test at 150°C. Findings revealed that UBM consumption by tin and the eventual disintegration allowed solder diffusion into the die circuitries resulting in the massive short failures.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
On-chip device and circuit diagnostics on advanced technology nodes by nanoprobing Study and mechanism of static scanning laser fault isolation on embed SRAM function fail Detailed package failure analysis on short failures after high temperature storage Hot carrier injection on back biasing double-gate FinFET with 10 and 25-nm fin width Gate oxide rupture localization by photon emission microscopy with the combination of Lock-in IR-OBIRCH
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1