新一代有机薄膜晶体管

F. Garnier
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引用次数: 0

摘要

在新开发的有机半导体中,噻吩低聚物(如硫代噻吩分子)在环境条件下非常稳定,并且可以通过300/spl度/ c左右的真空蒸发等温和技术很容易沉积成均匀的薄膜。研究表明,薄膜中分子的结构组织是控制其电性能的决定性因素。通过改变薄膜沉积的实验条件(衬底温度)和开发这些低聚物的自组装特性(半导体分子工程),可以很容易地获得具有长范围有序的高结构薄膜,这可以从观察到的大各向异性中得到证明,/spl sigma//sub 11/// /spl sigma//sub /spl perp//=150。本文描述了基于这些p型有机半导体的薄膜晶体管的制造和工作模式,其中衬底、绝缘体和电极可以由与全有机器件相对应的有机材料制成。
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New generation of organic-based thin-film transistors
Among the newly developed organic semiconductors, thiophene oligomers e.g., sexithiophene molecules are very stable under ambient conditions and they can be easily deposited as thin homogeneous films by the use of mild techniques such as vacuum evaporation at about 300/spl deg/ C. From X-ray diffraction, polarized light absorption spectroscopy and scanning electron microscopy studies, it has been shown that structural organization of molecules in the film is the determining factor which controls its electrical properties. By varying the experimental conditions for film deposition (substrate temperature) and by the development of self assembly properties in these oligomers (molecular engineering of semiconductors), highly structured film with long range order can be easily obtained as evidenced by the large anisotropy observed in conductivity, /spl sigma//sub 11///spl sigma//sub /spl perp//=150. The fabrication and mode of operation of thin film transistors based on these p-type organic semiconductors is described, in which substrate, insulator, and electrodes can be made from organic materials corresponding to an all organic device.
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