{"title":"叔丁基膦气源分子束外延生长高质量InGaP及相关异质结构","authors":"A. Hirama, H. Sai, H. Fujikura, H. Hasegawa","doi":"10.1109/ICIPRM.1999.773754","DOIUrl":null,"url":null,"abstract":"By carefully optimizing growth conditions based on RHEED, AFM, PL and Hall measurements, high-quality InGaP layers were successfully grown by gas source molecular beam epitaxy (GSMBE) using tertiarybutylphosphine (TBP) for the first time. The InGaP layers grown under the optimum condition showed a narrow and intense PL band-edge emission at low temperature as well as high electron mobility of 3300 cm/sup 2//Vs at 300 K. InGaP/GaAs/InGaP quantum wells (QWs) were also formed. The quality of the bottom interface of the QW strongly depended on the growth sequence. Under the optimum sequence, QWs showed intense and narrow PL peaks, whereas the unoptimized sequence led to interface-related PL emissions and poor PL properties.","PeriodicalId":213868,"journal":{"name":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","volume":"69 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-05-16","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Growth of high quality InGaP and related heterostructures by gas-source molecular beam epitaxy using tertiarybutylphosphine\",\"authors\":\"A. Hirama, H. Sai, H. Fujikura, H. Hasegawa\",\"doi\":\"10.1109/ICIPRM.1999.773754\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"By carefully optimizing growth conditions based on RHEED, AFM, PL and Hall measurements, high-quality InGaP layers were successfully grown by gas source molecular beam epitaxy (GSMBE) using tertiarybutylphosphine (TBP) for the first time. The InGaP layers grown under the optimum condition showed a narrow and intense PL band-edge emission at low temperature as well as high electron mobility of 3300 cm/sup 2//Vs at 300 K. InGaP/GaAs/InGaP quantum wells (QWs) were also formed. The quality of the bottom interface of the QW strongly depended on the growth sequence. Under the optimum sequence, QWs showed intense and narrow PL peaks, whereas the unoptimized sequence led to interface-related PL emissions and poor PL properties.\",\"PeriodicalId\":213868,\"journal\":{\"name\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"volume\":\"69 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-05-16\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1999.773754\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Conference Proceedings. Eleventh International Conference on Indium Phosphide and Related Materials (IPRM'99) (Cat. No.99CH36362)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1999.773754","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Growth of high quality InGaP and related heterostructures by gas-source molecular beam epitaxy using tertiarybutylphosphine
By carefully optimizing growth conditions based on RHEED, AFM, PL and Hall measurements, high-quality InGaP layers were successfully grown by gas source molecular beam epitaxy (GSMBE) using tertiarybutylphosphine (TBP) for the first time. The InGaP layers grown under the optimum condition showed a narrow and intense PL band-edge emission at low temperature as well as high electron mobility of 3300 cm/sup 2//Vs at 300 K. InGaP/GaAs/InGaP quantum wells (QWs) were also formed. The quality of the bottom interface of the QW strongly depended on the growth sequence. Under the optimum sequence, QWs showed intense and narrow PL peaks, whereas the unoptimized sequence led to interface-related PL emissions and poor PL properties.
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