基于p-MOS和p-MNOS的厚栅绝缘子rad - fet的ELDRS:实验与仿真

2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS) Pub Date : 2018-09-01 DOI:10.1109/RADECS45761.2018.9328654

P. Zimin, E. Mrozovskaya, V. Anashin, P. Chubunov, O. V. Meschurov, R. G. Useinov, V. M. Uzhegov, A. G. Baz, G. Zebrev

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引用次数: 4

摘要

结果表明，在低剂量率(ELDRS)下，p-MOS和MNOS剂量计的厚栅介质中发生了增强的电荷捕获。结果与先前提出的模型一致。

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ELDRS in p-MOS and p-MNOS Based RAD-FETs with Thick Gate Insulators: Experiment and Simulation

It was shown that enhanced charge trapping takes place in thick gate dielectrics of p-MOS and MNOS dosimeters at low dose rates (ELDRS). The results are shown to be consistent with the previously proposed model.

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2018 18th European Conference on Radiation and Its Effects on Components and Systems (RADECS)

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