柔性和透明的ReRAM与gzo -记忆层和gzo -电极在大PEN片

2010 IEEE International Memory Workshop Pub Date : 2010-05-16 DOI:10.1109/IMW.2010.5488315

K. Kinoshita, T. Okutani, H. Tanaka, T. Hinoki, H. Agura, K. Yazawa, K. Ohmi, S. Kishida

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引用次数: 14

摘要

采用射频等离子体辅助直流磁控溅射方法，在大面积PEN薄片上制备了由GZO存储层和GZO电极组成的柔性透明ReRAM。all-GZO-FT-ReRAM的电阻开关机理可以用氧化还原模型和传统二元过渡金属氧化物的氧化还原模型来解释。存储器层为GZO(RH2=5%)的all-GZO-FT-ReRAM复位开关平稳、连续，可实现校验操作和多级应用。

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Flexible and transparent ReRAM with GZO-memory-layer and GZO-electrodes on large PEN sheet

Fabrication of flexible transparent ReRAM consisting of the GZO memory layer and GZO-electrodes on the PEN sheet with large area was attained by the introduction of the RF plasma assist DC magnetron sputtering method. Resistive switching mechanism of all-GZO-FT-ReRAM can be explained by the redox model as well as that of conventional binary transition metal oxides. Reset switching of all-GZO-FT-ReRAM which memory layer is GZO(RH2=5%) is smooth and continuous, which enables the verify operation and the multilevel application.

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2010 IEEE International Memory Workshop

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