{"title":"湿法蚀刻研究HfO/sub /对氧化物的选择性","authors":"T. Kang, Chih-Cheng Wang, B. Tsui, Yuan-Hsin Li","doi":"10.1109/SMTW.2004.1393729","DOIUrl":null,"url":null,"abstract":"Experiments indicate that higher HfO/sub 2//oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO/sub 2/ and CVD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO/sub 2/ and annealed CVD oxides will result in considerably high HfO/sub 2//CVD oxide etching selectivity in IPA/HF solution.","PeriodicalId":369092,"journal":{"name":"2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)","volume":"42 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2004-09-09","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"5","resultStr":"{\"title\":\"Selectivity investigation of HfO/sub 2/ to oxide using wet etching\",\"authors\":\"T. Kang, Chih-Cheng Wang, B. Tsui, Yuan-Hsin Li\",\"doi\":\"10.1109/SMTW.2004.1393729\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Experiments indicate that higher HfO/sub 2//oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO/sub 2/ and CVD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO/sub 2/ and annealed CVD oxides will result in considerably high HfO/sub 2//CVD oxide etching selectivity in IPA/HF solution.\",\"PeriodicalId\":369092,\"journal\":{\"name\":\"2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)\",\"volume\":\"42 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2004-09-09\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"5\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/SMTW.2004.1393729\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2004 Semiconductor Manufacturing Technology Workshop Proceedings (IEEE Cat. No.04EX846)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/SMTW.2004.1393729","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Selectivity investigation of HfO/sub 2/ to oxide using wet etching
Experiments indicate that higher HfO/sub 2//oxide etching selectivity in IPA/HF solution as compared to DI water/HF solution. Although DI water/HF solution is acceptable for some HfO/sub 2/ and CVD oxide films, from an integration point of view, the process window is smaller than IPA/HF solution. It is believed that adequately damaged HfO/sub 2/ and annealed CVD oxides will result in considerably high HfO/sub 2//CVD oxide etching selectivity in IPA/HF solution.
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