J.B. Liu, S. Iyer, J. Min, P. K. Chu, R. Gronsky, C. Hu, N. W. Chueng
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引用次数: 2
摘要
等离子体氧注入分离(SPIMOX)是一种制备绝缘体上硅(SOI)晶圆的新方法。该方法采用等离子体浸没离子注入(PIII)，将所需的注入电压施加到浸没在等离子体中的晶圆上。SIMOX特别适用于通过注入氧气(SIMOX)晶圆制造的薄分离。在SPIMOX中可以实现较高的植入率。在3分钟的植入时间内，可以达到接近10/sup 18/ cm/sup -2/的剂量，植入电流密度为1 mA cm/sup -2/。短的植入时间和简单的植入设备使其成为一种潜在的更经济的制造SIMOX晶圆的方法。此外，随着晶圆尺寸的增大，SPIMOX的理论注入时间保持不变。
Synthesis of buried oxide by plasma implantation with oxygen and water plasma
Separation by plasma implantation of oxygen (SPIMOX) is a novel method for fabricating silicon-on-insulator (SOI) wafers. This method uses plasma immersion ion implantation (PIII) where the desired voltage of implant is applied to a wafer immersed in a plasma. SPIMOX is particularly suited for thin separation by implantation of oxygen (SIMOX) wafer fabrication. High implantation rates can be achieved in SPIMOX. A dose of nearly 10/sup 18/ cm/sup -2/ with an implant current density of 1 mA cm/sup -2/ can be achieved in 3 minutes of implantation time. The short implantation time and the simplicity of the implantation equipment makes it a potentially more economical method for fabricating SIMOX wafers. Moreover, the theoretical time for implantation remains constant in SPIMOX with increase in wafer size.
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