SOI晶圆的最后抛光-表面粗糙度和TTV退化

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526515

G. Pfeiffer, S. Fetheroff, S. S. Iyer

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引用次数: 3

摘要

我们已经展示了一种可制造的基于CMP的最终工艺，以恢复制备的SOI晶圆的粗糙度。可实现的粗糙度与基本硅块晶圆相当，并符合ULSI的硅晶圆要求。伴随这个过程的是一些电视质量的下降。我们的工艺已经调整到最小化这种退化，并保持其与CMOS/SOI对TTV的要求一致。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Final polish for SOI wafers-surface roughness and TTV degradation

We have demonstrated a manufacturable final CMP based process to recover the roughness of as-prepared SOI wafers. The roughness achievable is comparable to prime Si bulk wafers and in keeping with Si wafer requirements for ULSI. Concomitant to the process is some TTV degradation. Our process has been tuned to minimize this degradation and to keep it consistent with CMOS/SOI requirements on TTV.

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1995 IEEE International SOI Conference Proceedings

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