{"title":"电路性能变异性分解","authors":"M. Orshansky, C. Spanos, C. Hu","doi":"10.1109/IWSTM.1999.773184","DOIUrl":null,"url":null,"abstract":"In this paper, circuit performance variability composition is analyzed. Traditionally, the device variability has been the dominant source. It is believed that with continuing technology scaling into the deep sub-micron regime, the interconnect constitutes an increasing portion of the overall circuit delay, and variability. In this paper, we analytically investigate the delay variability composition for an advanced 0.18 /spl mu/m CMOS technology, accounting for the significant intra-field variability. A more realistic model to estimate the variance of global interconnect lines is proposed. The results indicate that the device variability of good designs contributes about 90% of the overall variability.","PeriodicalId":253336,"journal":{"name":"1999 4th International Workshop on Statistical Metrology (Cat. No.99TH8391)","volume":"209 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1999-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"25","resultStr":"{\"title\":\"Circuit performance variability decomposition\",\"authors\":\"M. Orshansky, C. Spanos, C. Hu\",\"doi\":\"10.1109/IWSTM.1999.773184\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, circuit performance variability composition is analyzed. Traditionally, the device variability has been the dominant source. It is believed that with continuing technology scaling into the deep sub-micron regime, the interconnect constitutes an increasing portion of the overall circuit delay, and variability. In this paper, we analytically investigate the delay variability composition for an advanced 0.18 /spl mu/m CMOS technology, accounting for the significant intra-field variability. A more realistic model to estimate the variance of global interconnect lines is proposed. The results indicate that the device variability of good designs contributes about 90% of the overall variability.\",\"PeriodicalId\":253336,\"journal\":{\"name\":\"1999 4th International Workshop on Statistical Metrology (Cat. No.99TH8391)\",\"volume\":\"209 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1999-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"25\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1999 4th International Workshop on Statistical Metrology (Cat. No.99TH8391)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWSTM.1999.773184\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1999 4th International Workshop on Statistical Metrology (Cat. No.99TH8391)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWSTM.1999.773184","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
In this paper, circuit performance variability composition is analyzed. Traditionally, the device variability has been the dominant source. It is believed that with continuing technology scaling into the deep sub-micron regime, the interconnect constitutes an increasing portion of the overall circuit delay, and variability. In this paper, we analytically investigate the delay variability composition for an advanced 0.18 /spl mu/m CMOS technology, accounting for the significant intra-field variability. A more realistic model to estimate the variance of global interconnect lines is proposed. The results indicate that the device variability of good designs contributes about 90% of the overall variability.