基于CMOS的伽马辐射剂量计的比较研究

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI:10.1109/ICDCSYST.2018.8605158

Avashesh Dubey, Mridula Gupta, R. Narang, M. Saxena

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引用次数: 5

摘要

本文对CMOS双栅RADFET、GAA型RADFET、JL-DG型无结双栅RADFET剂量计及其电学性能进行了定量比较研究。利用Sentaurus 3D Device模拟器的伽马辐射模型，研究了中等剂量辐射环境下电子空穴的俘获脱陷。讨论了总剂量对阈值电压和漏极电流的影响。所得结果表明，与传统的DG RADFET和GAA RADFET剂量计相比，JL DG RADFET的亚阈值参数有所改善。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Comparative Study of CMOS based Dosimeters for Gamma Radiation

In this paper, a quantitative comparison study of the CMOS based Double Gate RADFET, Gate All Around (GAA) RADFET, Junctionless Double Gate (JL-DG) RADFET dosimeter and their electrical performance has been carried out. Gamma radiation Model of Sentaurus 3D Device simulator has been used to investigate the trapping detrapping of electron hole due to the moderate dose radiation environment. The impact of the total dose on the threshold voltage and drain current has been addressed. The obtained results indicate improvement in the subthreshold parameters of JL DG RADFET as compared to the conventional DG RADFET and GAA RADFET dosimeter.

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2018 4th International Conference on Devices, Circuits and Systems (ICDCS)

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