P. Savolainen, M. Toivonen, A. Salokatve, H. Asonen, R. Murison
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High characteristics temperature of strain-compensated 1.3 /spl mu/m InAsP/InGaP/InP multi-quantum well lasers grown by all solid source molecular beam epitaxy
In this paper, we have studied InAsP/InGaP/InP strain-compensated lasers with 10 QWs grown by all solid source molecular beam epitaxy (SSMBE). High characteristic temperature T/sub 0/ value of about 100 K in the temperature range 20-80/spl deg/C and low threshold current density of 87 A/cm/sup 2/ per well for infinite cavity length are reported. Our results clearly demonstrate the suitability of the InAsP/InGaP strain-compensated system for lasers operating at elevated temperatures. Also, together with our earlier studies the obtained results show that SSMBE is a competitive growth method for optoelectronic devices.
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