Binghai Liu, E. Er, S. Zhao, C. Chen, A. G. Boon, Kunihiko Takahashi, C. Subbu, J. Lam
{"title":"用透射电镜对高过孔电阻失效分析研究","authors":"Binghai Liu, E. Er, S. Zhao, C. Chen, A. G. Boon, Kunihiko Takahashi, C. Subbu, J. Lam","doi":"10.1109/IPFA.2014.6898200","DOIUrl":null,"url":null,"abstract":"In this work we reported a case study on ET (electrical testing) failure with via high resistance issue. In order to understand the failure mechanism and root cause behind the high via resistance, detailed TEM(transmission electron microscope) analysis was performed by using various TEM FA (failure analysis)techniques, including EDX, EELS analysis. It was found out that high via resistance arose from the process drift-induced Al extrusion and poor barrier metal coverage at via bottom. The correlation between the physical signatures identified by TEM FA and the associated processes were discussed for the root cause understanding.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"103 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Study on the high via resistance by TEM failure analysis\",\"authors\":\"Binghai Liu, E. Er, S. Zhao, C. Chen, A. G. Boon, Kunihiko Takahashi, C. Subbu, J. Lam\",\"doi\":\"10.1109/IPFA.2014.6898200\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this work we reported a case study on ET (electrical testing) failure with via high resistance issue. In order to understand the failure mechanism and root cause behind the high via resistance, detailed TEM(transmission electron microscope) analysis was performed by using various TEM FA (failure analysis)techniques, including EDX, EELS analysis. It was found out that high via resistance arose from the process drift-induced Al extrusion and poor barrier metal coverage at via bottom. The correlation between the physical signatures identified by TEM FA and the associated processes were discussed for the root cause understanding.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"103 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898200\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898200","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Study on the high via resistance by TEM failure analysis
In this work we reported a case study on ET (electrical testing) failure with via high resistance issue. In order to understand the failure mechanism and root cause behind the high via resistance, detailed TEM(transmission electron microscope) analysis was performed by using various TEM FA (failure analysis)techniques, including EDX, EELS analysis. It was found out that high via resistance arose from the process drift-induced Al extrusion and poor barrier metal coverage at via bottom. The correlation between the physical signatures identified by TEM FA and the associated processes were discussed for the root cause understanding.
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