Cross-linked polyvinyl phenol as dielectric for flexible bottom gate bottom contact transistors

Polyvinyl phenol with a cross-linker agent was demonstrated as a dielectric film and incorporated to a bottom gate organic transistor structure. Films were shown transparent to visible light, resistant to organic solvents and compatible with plasma etching to open vias. Only cross-linked films, however, withstood lithography in order to pattern bottom contact electrodes on top of the dielectric. Cross-linked films showed a dielectric constant of ca. 5, which is higher than polymethylmethacrylate and silicon oxide. The devices herein have potential to be applied in flexible sensor arrays from organic transistors.