使用慢淬操作的多级相变存储器:GST vs. GSST

2009 International Symposium on VLSI Technology, Systems, and Applications Pub Date : 2009-04-27 DOI:10.1109/VTSA.2009.5159282

D. Chao, Frederick T. Chen, Y. Hsu, Wenhsing Liu, Chain-Ming Lee, Chih-Wei Chen, Weisu Chen, M. Kao, M. Tsai

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引用次数: 2

摘要

在本文中，我们演示了使用慢淬波形进行多级相变存储器操作，并比较了Ge21Sn10Sb15Te54 (GSST)和Ge2Sb2Te5 (GST)的使用。由于GSST的结晶速度更快，因此使用GSST可以实现更快的多级操作

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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Multi-level phase change memory using slow-quench operation: GST vs. GSST

In this paper, we demonstrate the use of a slow-quench waveform for multi-level phase change memory operation and compare the use of Ge21Sn10Sb15Te54 (GSST) and Ge2Sb2Te5 (GST). A faster multilevel operation is possible with the use of GSST, owing to its faster crystallization speed

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2009 International Symposium on VLSI Technology, Systems, and Applications

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