PD和FD晶体管中soi特异性热孔诱导的退化

1995 IEEE International SOI Conference Proceedings Pub Date : 1995-10-03 DOI:10.1109/SOI.1995.526468

S. Sinha, F. Duan, D. Ioannou, W. Jenkins, H. Hughes

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引用次数: 0

摘要

热载流子相关的退化和SOI器件的可靠性最近变得越来越重要。本文报道了SOI mosfet中的两种新效应，并对衬底电流进行了详细的研究。第一个效应与最近的报道有关，声称在前门电子注入应力期间，后通道的退化可以忽略不计。第二个效应与热孔注入过程中界面态产生机制的性质有关。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

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SOI-specific hot-hole induced degradation in PD and FD transistors

Hot carrier related degradation and reliability of SOI devices has assumed recently increased importance. The purpose of this paper is to report two new effects in SOI MOSFETs, and the results of a detailed study of the substrate current. The first effect relates to recent reports claiming that during front gate electron injection stress, the degradation of the back channel is negligible. The second effect relates to the nature of the generation mechanisms of interface states during hot hole injection.

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1995 IEEE International SOI Conference Proceedings

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