P. de la Houssaye, C.E. Chang, B. Offord, R. Johnson, P. Asbeck, G. Garcia, I. Lagnado
{"title":"具有极低微波噪声的硅mosfet","authors":"P. de la Houssaye, C.E. Chang, B. Offord, R. Johnson, P. Asbeck, G. Garcia, I. Lagnado","doi":"10.1109/DRC.1995.496231","DOIUrl":null,"url":null,"abstract":"Reports MOSFETs with noise figures as low as 0.9 dB at 2 GHz, the lowest achieved to date with Si FETs. The devices were fabricated in thin-film silicon-on-sapphire, with gate lengths (defined by optical lithography) drawn at 0.5 /spl mu/m. The devices employed T-gate structures, with extra added aluminum to minimize gate resistance. The microwave gain was high: f/sub max/ values were as high as 52 GHz (near record performance) for nMOS and 32 GHz far pMOS transistors; f/sub t/ values were 17 GHz and 13 GHz for nMOS and pMOS respectively.","PeriodicalId":326645,"journal":{"name":"1995 53rd Annual Device Research Conference Digest","volume":"20 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1995-06-19","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"4","resultStr":"{\"title\":\"Silicon MOSFETs with very low microwave noise\",\"authors\":\"P. de la Houssaye, C.E. Chang, B. Offord, R. Johnson, P. Asbeck, G. Garcia, I. Lagnado\",\"doi\":\"10.1109/DRC.1995.496231\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Reports MOSFETs with noise figures as low as 0.9 dB at 2 GHz, the lowest achieved to date with Si FETs. The devices were fabricated in thin-film silicon-on-sapphire, with gate lengths (defined by optical lithography) drawn at 0.5 /spl mu/m. The devices employed T-gate structures, with extra added aluminum to minimize gate resistance. The microwave gain was high: f/sub max/ values were as high as 52 GHz (near record performance) for nMOS and 32 GHz far pMOS transistors; f/sub t/ values were 17 GHz and 13 GHz for nMOS and pMOS respectively.\",\"PeriodicalId\":326645,\"journal\":{\"name\":\"1995 53rd Annual Device Research Conference Digest\",\"volume\":\"20 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1995-06-19\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"4\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"1995 53rd Annual Device Research Conference Digest\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/DRC.1995.496231\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"1995 53rd Annual Device Research Conference Digest","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/DRC.1995.496231","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Reports MOSFETs with noise figures as low as 0.9 dB at 2 GHz, the lowest achieved to date with Si FETs. The devices were fabricated in thin-film silicon-on-sapphire, with gate lengths (defined by optical lithography) drawn at 0.5 /spl mu/m. The devices employed T-gate structures, with extra added aluminum to minimize gate resistance. The microwave gain was high: f/sub max/ values were as high as 52 GHz (near record performance) for nMOS and 32 GHz far pMOS transistors; f/sub t/ values were 17 GHz and 13 GHz for nMOS and pMOS respectively.
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