{"title":"一种用于低功率2.4GHz应用的差动有源电感性能控制新方法","authors":"François Belmas, F. Hameau, J. Fournier","doi":"10.1109/ICICDT.2010.5510245","DOIUrl":null,"url":null,"abstract":"In this paper we present a new method for controlling the performance of a Differential Active Inductor (DAI) used as resonating output load of an RF amplifier and working at Ultra Low Power (ULP) consumption. A new solution is proposed for linearity improvement without extra power consumption and without SNR degradation. For a given impedance value at the resonance frequency of the DAI (corresponding to a given amplifier gain), tradeoff between quality factor Q and IIP3 is highlighted. Then, an optimization method is proposed which takes into account the power consumption. A simulated DAI presents -2.7 dBm IIP3, 40nV/Hz noise voltage density and almost 3.0kΩ load at the resonance frequency of 2.45GHz. The total power consumption is 0.8 mW under 1V power supply of a 65nm CMOS technology, and the circuit occupies 0.0012 mm² of silicon area.","PeriodicalId":187361,"journal":{"name":"2010 IEEE International Conference on Integrated Circuit Design and Technology","volume":"52 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2010-06-02","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"A new method for performance control of a differential active inductor for low power 2.4GHz applications\",\"authors\":\"François Belmas, F. Hameau, J. Fournier\",\"doi\":\"10.1109/ICICDT.2010.5510245\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper we present a new method for controlling the performance of a Differential Active Inductor (DAI) used as resonating output load of an RF amplifier and working at Ultra Low Power (ULP) consumption. A new solution is proposed for linearity improvement without extra power consumption and without SNR degradation. For a given impedance value at the resonance frequency of the DAI (corresponding to a given amplifier gain), tradeoff between quality factor Q and IIP3 is highlighted. Then, an optimization method is proposed which takes into account the power consumption. A simulated DAI presents -2.7 dBm IIP3, 40nV/Hz noise voltage density and almost 3.0kΩ load at the resonance frequency of 2.45GHz. The total power consumption is 0.8 mW under 1V power supply of a 65nm CMOS technology, and the circuit occupies 0.0012 mm² of silicon area.\",\"PeriodicalId\":187361,\"journal\":{\"name\":\"2010 IEEE International Conference on Integrated Circuit Design and Technology\",\"volume\":\"52 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2010-06-02\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2010 IEEE International Conference on Integrated Circuit Design and Technology\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICICDT.2010.5510245\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2010 IEEE International Conference on Integrated Circuit Design and Technology","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICICDT.2010.5510245","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A new method for performance control of a differential active inductor for low power 2.4GHz applications
In this paper we present a new method for controlling the performance of a Differential Active Inductor (DAI) used as resonating output load of an RF amplifier and working at Ultra Low Power (ULP) consumption. A new solution is proposed for linearity improvement without extra power consumption and without SNR degradation. For a given impedance value at the resonance frequency of the DAI (corresponding to a given amplifier gain), tradeoff between quality factor Q and IIP3 is highlighted. Then, an optimization method is proposed which takes into account the power consumption. A simulated DAI presents -2.7 dBm IIP3, 40nV/Hz noise voltage density and almost 3.0kΩ load at the resonance frequency of 2.45GHz. The total power consumption is 0.8 mW under 1V power supply of a 65nm CMOS technology, and the circuit occupies 0.0012 mm² of silicon area.