AlGaN/GaN hemt直流特性分析:仿真

2018 4th International Conference on Devices, Circuits and Systems (ICDCS) Pub Date : 2018-03-01 DOI:10.1109/ICDCSyst.2018.8605157

Ajay, S. Chander, Mridula Gupta

{"title":"AlGaN/GaN hemt直流特性分析:仿真","authors":"Ajay, S. Chander, Mridula Gupta","doi":"10.1109/ICDCSyst.2018.8605157","DOIUrl":null,"url":null,"abstract":"In this paper, a systematic studies have been performed on the different architectures of AlGaN/GaN high-electron-mobility transistors (HEMTs) through Sentaurus simulation software. The DC characteristics have been investigated for three different architectures of AlGaN/GaN HEMTs (Common Drain, Common Source and Conventional HEMTs). The common drain (CD) AlGaN/GaN HEMT shows the better DC characteristics in comparison to the common source (CS) AlGaN/GaN HEMT and conventional AlGaN/GaN HEMT.","PeriodicalId":175583,"journal":{"name":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","volume":"4 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2018-03-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"1","resultStr":"{\"title\":\"Analysis of DC Characteristics of AlGaN/GaN HEMTs: Simulation\",\"authors\":\"Ajay, S. Chander, Mridula Gupta\",\"doi\":\"10.1109/ICDCSyst.2018.8605157\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"In this paper, a systematic studies have been performed on the different architectures of AlGaN/GaN high-electron-mobility transistors (HEMTs) through Sentaurus simulation software. The DC characteristics have been investigated for three different architectures of AlGaN/GaN HEMTs (Common Drain, Common Source and Conventional HEMTs). The common drain (CD) AlGaN/GaN HEMT shows the better DC characteristics in comparison to the common source (CS) AlGaN/GaN HEMT and conventional AlGaN/GaN HEMT.\",\"PeriodicalId\":175583,\"journal\":{\"name\":\"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)\",\"volume\":\"4 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2018-03-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"1\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICDCSyst.2018.8605157\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2018 4th International Conference on Devices, Circuits and Systems (ICDCS)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICDCSyst.2018.8605157","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}

引用次数: 1

摘要

本文通过Sentaurus仿真软件对不同结构的AlGaN/GaN高电子迁移率晶体管(hemt)进行了系统的研究。研究了三种不同结构的AlGaN/GaN hemt(共漏、共源和常规hemt)的直流特性。与共源型(CS) AlGaN/GaN HEMT和传统的AlGaN/GaN HEMT相比，共漏型(CD) AlGaN/GaN HEMT具有更好的直流特性。

本文章由计算机程序翻译，如有差异，请以英文原文为准。

查看原文

微信好友朋友圈 QQ好友复制链接

本刊更多论文

Analysis of DC Characteristics of AlGaN/GaN HEMTs: Simulation

In this paper, a systematic studies have been performed on the different architectures of AlGaN/GaN high-electron-mobility transistors (HEMTs) through Sentaurus simulation software. The DC characteristics have been investigated for three different architectures of AlGaN/GaN HEMTs (Common Drain, Common Source and Conventional HEMTs). The common drain (CD) AlGaN/GaN HEMT shows the better DC characteristics in comparison to the common source (CS) AlGaN/GaN HEMT and conventional AlGaN/GaN HEMT.

求助全文

通过发布文献求助，成功后即可免费获取论文全文。去求助

来源期刊

2018 4th International Conference on Devices, Circuits and Systems (ICDCS)

自引率

0.00%

发文量