浮体对逆变器链延迟的影响研究

R. Schiebel, T. Houston, R. Rajgopal, K. Joyner, J. Fossum, Dongwoo Suh, S. Krishnan
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引用次数: 12

摘要

Sub和Fossum(1994)预测,部分耗尽(PD) SOI晶体管中的浮体效应将导致PD/SOI电路的性能取决于其最近的历史。浮体电压对阈值电压V/sub /产生影响,导致漏电流和栅极延迟的滞后依赖。相互作用是复杂的,需要实验数据来验证模型,并确定影响电路性能的意义。这项工作的目的是促进对滞回浮体效应的理解,这些过程中涉及的时间常数的相互作用,以及它们对电路性能的影响。
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A study of floating-body effects on inverter chain delay
Sub and Fossum (1994) predicted that floating-body effects in partially depleted (PD) SOI transistors will cause the performance of a PD/SOI circuit to depend on its recent history. The voltage of the floating body affects the threshold voltage V/sub t/ which results in hysteretic dependence of leakage current and gate delay. The interactions are complex, and experimental data are needed to confirm the model and establish the significance of the effects on circuit performance. The purpose of this work is to advance understanding of hysteretic floating-body effects, the interplay of time constants involved in these processes, and their impact on circuit performance.
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Analytical threshold voltage model for short channel n/sup +/-p/sup +/ double-gate SOI MOSFETs Front and back gate interface-trap generation due to hot carrier stress in fully depleted SOI/MOSFETs SOI material characterization using optical second harmonic generation Minimum parasitic resistance for ultra-thin SOI MOSFET with high-permittivity gate insulator performed by lateral contact structure Transient effects in floating body SOI NMOSFETs
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