{"title":"综述了集成GaN开关模式放大器的数字发射机的最新进展","authors":"R. Ma","doi":"10.1109/RFIT.2015.7377891","DOIUrl":null,"url":null,"abstract":"GaN integrated switch-mode power amplifier with high output power, fast and efficient switching characteristic has been considered as a very suitable technology for implementing advanced digital radio transmitter. It is featured of energy-efficient and re-configurable operation. This paper reviews the recently reported works in this promising research topic. Key technical challenges on the device technology, modeling, and circuit designs are summarized. Future development trend is discussed.","PeriodicalId":422369,"journal":{"name":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","volume":"3 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-08-01","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"10","resultStr":"{\"title\":\"A review of recent development on digital transmitters with integrated GaN switch-mode amplifiers\",\"authors\":\"R. Ma\",\"doi\":\"10.1109/RFIT.2015.7377891\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"GaN integrated switch-mode power amplifier with high output power, fast and efficient switching characteristic has been considered as a very suitable technology for implementing advanced digital radio transmitter. It is featured of energy-efficient and re-configurable operation. This paper reviews the recently reported works in this promising research topic. Key technical challenges on the device technology, modeling, and circuit designs are summarized. Future development trend is discussed.\",\"PeriodicalId\":422369,\"journal\":{\"name\":\"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"volume\":\"3 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-08-01\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"10\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/RFIT.2015.7377891\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 IEEE International Symposium on Radio-Frequency Integration Technology (RFIT)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/RFIT.2015.7377891","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
A review of recent development on digital transmitters with integrated GaN switch-mode amplifiers
GaN integrated switch-mode power amplifier with high output power, fast and efficient switching characteristic has been considered as a very suitable technology for implementing advanced digital radio transmitter. It is featured of energy-efficient and re-configurable operation. This paper reviews the recently reported works in this promising research topic. Key technical challenges on the device technology, modeling, and circuit designs are summarized. Future development trend is discussed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
