对不同nLDMOS器件ESD稳健性的综合研究及相应改进

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898177

Y. Wang, Guangyi Lu, Lizhong Zhang, Jian Cao, S. Jia, Xing Zhang

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引用次数: 8

摘要

采用0.18μm 40V SOI BCD技术，研究了四端和三端非对称n型LDMOS器件。为了提高普通非对称nldmos器件的ESD稳健性，在其源/漏扩散区域下方添加了一个额外的p-sink植入物。传输线脉冲测量结果表明，新型非对称nldmos器件具有合适的触发电压，二次击穿电流提高30-48%。

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Comprehensive study and corresponding improvements on the ESD robustness of different nLDMOS devices

Four-terminal and three-terminal asymmetrical n-type LDMOS (asym-nLDMOS) devices are investigated in 0.18μm 40V SOI BCD technology. To improve normal asym-nLDMOS devices ESD robustness, an additional p-sink implant is added beneath their source/drain diffusion regions. Transmission line pulse measured results show that the novel asym-nLDMOS devices have a suitable triggering voltage and 30-48% improvement of second breakdown current.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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