Role of the bipolar transistor on the hot-carrier-degradation of SOI MOSFETs

Hot-carrier-induced degradation is a major challenge for shrinking further the size of bulk Si or SOI components. Although there is no evidence that the aging of SOI MOSFETs is more severe than that of bulk Si counterparts, the degradation mechanisms are more complex: (i) not only the front gate but also the buried oxide and related interface may be damaged, (ii) interface coupling allows the front channel to sense the presence of defects at the opposite interface, (iii) the fields are different, and (iv) floating-body effects may come into play. The purpose of this work is to investigate the latter aspect by revealing the main consequences of stresses conducted in floating- and biased-body modes.