{"title":"宝马汽车工业中的半导体失效分析:从x射线显微镜到STEM薄片上的ToF-SIMS测量","authors":"D. Braun, S. Diez, J. Kopitzke","doi":"10.31399/asm.cp.istfa2021p0044","DOIUrl":null,"url":null,"abstract":"\n Considering the growing need for the use of semiconductors in the automotive industry, this paper aims to describe the analyzing process from an automotive manufacturer point of view. The use of X-Ray Microscopy and a combination of ToF-SIMS and FIB are shown.","PeriodicalId":188323,"journal":{"name":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","volume":"1 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2021-10-31","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Semiconductor Failure Analysis in Automotive Industry at BMW: from X-Ray Microscopy to ToF-SIMS Measurements on a STEM Lamella\",\"authors\":\"D. Braun, S. Diez, J. Kopitzke\",\"doi\":\"10.31399/asm.cp.istfa2021p0044\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"\\n Considering the growing need for the use of semiconductors in the automotive industry, this paper aims to describe the analyzing process from an automotive manufacturer point of view. The use of X-Ray Microscopy and a combination of ToF-SIMS and FIB are shown.\",\"PeriodicalId\":188323,\"journal\":{\"name\":\"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis\",\"volume\":\"1 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2021-10-31\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.31399/asm.cp.istfa2021p0044\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"ISTFA 2021: Conference Proceedings from the 47th International Symposium for Testing and Failure Analysis","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.31399/asm.cp.istfa2021p0044","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Semiconductor Failure Analysis in Automotive Industry at BMW: from X-Ray Microscopy to ToF-SIMS Measurements on a STEM Lamella
Considering the growing need for the use of semiconductors in the automotive industry, this paper aims to describe the analyzing process from an automotive manufacturer point of view. The use of X-Ray Microscopy and a combination of ToF-SIMS and FIB are shown.
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