用于高分辨率红外图像背面失效分析的简单、新颖、低成本的数值增孔径透镜系统

Li Tian
{"title":"用于高分辨率红外图像背面失效分析的简单、新颖、低成本的数值增孔径透镜系统","authors":"Li Tian","doi":"10.1109/IPFA.2014.6898136","DOIUrl":null,"url":null,"abstract":"As is known to all, we could capture clearer infrared (IR) image from backside as Si substrate was thinner. But if we needed higher resolution image with conventional optical objective lens, we must introduce numerical aperture increasing lens(NAIL) technology or shorter wavelength light to improve numerical aperture (NA) in objective space. Now some vendors can provide NanoLens with NAIL but it is very expensive. In this paper, we proposed one simple and novel system of NAIL. Firstly, we fabricated two NAILs (one R≈3mm, the other R≈ 5mm) with glass material, and captured higher resolution IR image with NAIL help. Secondly, we found clearer image from smaller size NAIL by comparing IR images. Then, we studied how to moving NAIL on backside surface of die. Two moving methods were designed and we discussed their advantage and disadvantage, one of them was used in FA experiment. Although there were some limitation and disadvantage for this system, we believed this simple, novel and low cost NAIL system was beneficial to our FA from backside.","PeriodicalId":409316,"journal":{"name":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","volume":"461 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2014-09-18","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"3","resultStr":"{\"title\":\"Simple, novel and low cost numerical aperture increasing lens system for high resolution infrared image in backside failure analysis\",\"authors\":\"Li Tian\",\"doi\":\"10.1109/IPFA.2014.6898136\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"As is known to all, we could capture clearer infrared (IR) image from backside as Si substrate was thinner. But if we needed higher resolution image with conventional optical objective lens, we must introduce numerical aperture increasing lens(NAIL) technology or shorter wavelength light to improve numerical aperture (NA) in objective space. Now some vendors can provide NanoLens with NAIL but it is very expensive. In this paper, we proposed one simple and novel system of NAIL. Firstly, we fabricated two NAILs (one R≈3mm, the other R≈ 5mm) with glass material, and captured higher resolution IR image with NAIL help. Secondly, we found clearer image from smaller size NAIL by comparing IR images. Then, we studied how to moving NAIL on backside surface of die. Two moving methods were designed and we discussed their advantage and disadvantage, one of them was used in FA experiment. Although there were some limitation and disadvantage for this system, we believed this simple, novel and low cost NAIL system was beneficial to our FA from backside.\",\"PeriodicalId\":409316,\"journal\":{\"name\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"volume\":\"461 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2014-09-18\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"3\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IPFA.2014.6898136\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IPFA.2014.6898136","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 3

摘要

众所周知,由于Si衬底较薄,我们可以从背面捕获更清晰的红外图像。但是,如果要用传统的光学物镜获得更高分辨率的图像,就必须引入数值孔径增大透镜(NAIL)技术或引入波长更短的光来提高物镜空间的数值孔径(NA)。现在一些供应商可以提供NanoLens与NAIL,但它非常昂贵。在本文中,我们提出了一个简单而新颖的NAIL系统。首先,我们用玻璃材料制作了两个钉子(一个R≈3mm,另一个R≈5mm),并在钉子的帮助下捕获了更高分辨率的红外图像。其次,通过对比红外图像,我们发现小尺寸的NAIL图像更清晰。然后,我们研究了如何在模具背面移动钉。设计了两种移动方法,讨论了它们的优缺点,并将其中一种方法用于FA实验。虽然该系统存在一定的局限性和缺点,但我们相信这种简单、新颖、低成本的NAIL系统对我们的FA是有益的。
本文章由计算机程序翻译,如有差异,请以英文原文为准。
查看原文
分享 分享
微信好友 朋友圈 QQ好友 复制链接
本刊更多论文
Simple, novel and low cost numerical aperture increasing lens system for high resolution infrared image in backside failure analysis
As is known to all, we could capture clearer infrared (IR) image from backside as Si substrate was thinner. But if we needed higher resolution image with conventional optical objective lens, we must introduce numerical aperture increasing lens(NAIL) technology or shorter wavelength light to improve numerical aperture (NA) in objective space. Now some vendors can provide NanoLens with NAIL but it is very expensive. In this paper, we proposed one simple and novel system of NAIL. Firstly, we fabricated two NAILs (one R≈3mm, the other R≈ 5mm) with glass material, and captured higher resolution IR image with NAIL help. Secondly, we found clearer image from smaller size NAIL by comparing IR images. Then, we studied how to moving NAIL on backside surface of die. Two moving methods were designed and we discussed their advantage and disadvantage, one of them was used in FA experiment. Although there were some limitation and disadvantage for this system, we believed this simple, novel and low cost NAIL system was beneficial to our FA from backside.
求助全文
通过发布文献求助,成功后即可免费获取论文全文。 去求助
来源期刊
自引率
0.00%
发文量
0
期刊最新文献
On-chip device and circuit diagnostics on advanced technology nodes by nanoprobing Study and mechanism of static scanning laser fault isolation on embed SRAM function fail Detailed package failure analysis on short failures after high temperature storage Hot carrier injection on back biasing double-gate FinFET with 10 and 25-nm fin width Gate oxide rupture localization by photon emission microscopy with the combination of Lock-in IR-OBIRCH
×
引用
GB/T 7714-2015
复制
MLA
复制
APA
复制
导出至
BibTeX EndNote RefMan NoteFirst NoteExpress
×
×
提示
您的信息不完整,为了账户安全,请先补充。
现在去补充
×
提示
您因"违规操作"
具体请查看互助需知
我知道了
×
提示
现在去查看 取消
×
提示
确定
0
微信
客服QQ
Book学术公众号 扫码关注我们
反馈
×
意见反馈
请填写您的意见或建议
请填写您的手机或邮箱
已复制链接
已复制链接
快去分享给好友吧!
我知道了
×
扫码分享
扫码分享
Book学术官方微信
Book学术文献互助
Book学术文献互助群
群 号:481959085
Book学术
文献互助 智能选刊 最新文献 互助须知 联系我们:info@booksci.cn
Book学术提供免费学术资源搜索服务,方便国内外学者检索中英文文献。致力于提供最便捷和优质的服务体验。
Copyright © 2023 Book学术 All rights reserved.
ghs 京公网安备 11010802042870号 京ICP备2023020795号-1