功率模块化学镀Ni-P膜的研制

N. Hasegawa, K. Hashizume, Toshiya Murata
{"title":"功率模块化学镀Ni-P膜的研制","authors":"N. Hasegawa, K. Hashizume, Toshiya Murata","doi":"10.23919/ICEP.2019.8733557","DOIUrl":null,"url":null,"abstract":"So far, we investigated the influence of phosphorus content and Sulfur content in electroless Ni-P plating films on film properties. As a result, we reported that the film containing low phosphorus content and containing no Sulfur is less susceptible to embrittlement during heat treatment. However, in the films reported so far, there are cases where sufficient cracks resistance cannot be obtained when the heat treatment temperature is 350 °C. Therefore, in this paper, we report on the development of a film which does not have cracks even after heat treatment at 400 °C by no Sulfur and low phosphorus content than films reported so far.","PeriodicalId":213025,"journal":{"name":"2019 International Conference on Electronics Packaging (ICEP)","volume":null,"pages":null},"PeriodicalIF":0.0000,"publicationDate":"2019-04-17","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"Development of Electroless Ni-P Plating Film for Power Modules\",\"authors\":\"N. Hasegawa, K. Hashizume, Toshiya Murata\",\"doi\":\"10.23919/ICEP.2019.8733557\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"So far, we investigated the influence of phosphorus content and Sulfur content in electroless Ni-P plating films on film properties. As a result, we reported that the film containing low phosphorus content and containing no Sulfur is less susceptible to embrittlement during heat treatment. However, in the films reported so far, there are cases where sufficient cracks resistance cannot be obtained when the heat treatment temperature is 350 °C. Therefore, in this paper, we report on the development of a film which does not have cracks even after heat treatment at 400 °C by no Sulfur and low phosphorus content than films reported so far.\",\"PeriodicalId\":213025,\"journal\":{\"name\":\"2019 International Conference on Electronics Packaging (ICEP)\",\"volume\":null,\"pages\":null},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2019-04-17\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2019 International Conference on Electronics Packaging (ICEP)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.23919/ICEP.2019.8733557\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2019 International Conference on Electronics Packaging (ICEP)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.23919/ICEP.2019.8733557","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0

摘要

到目前为止,我们研究了化学镀Ni-P薄膜中磷含量和硫含量对薄膜性能的影响。因此,我们报道了含磷量低且不含硫的薄膜在热处理过程中不易脆化。然而,在目前报道的薄膜中,存在热处理温度为350℃时不能获得足够的抗裂性的情况。因此,在本文中,我们报道了一种不含硫和低磷的薄膜,即使在400°C热处理后也不会产生裂纹。
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Development of Electroless Ni-P Plating Film for Power Modules
So far, we investigated the influence of phosphorus content and Sulfur content in electroless Ni-P plating films on film properties. As a result, we reported that the film containing low phosphorus content and containing no Sulfur is less susceptible to embrittlement during heat treatment. However, in the films reported so far, there are cases where sufficient cracks resistance cannot be obtained when the heat treatment temperature is 350 °C. Therefore, in this paper, we report on the development of a film which does not have cracks even after heat treatment at 400 °C by no Sulfur and low phosphorus content than films reported so far.
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