Structural and electrical properties of $\text{Ga}_{2}\mathrm{O}_{3}$ transistors grown on 4H-SiC substrates

$Ga_{2}O_{3}$ represents a promising semiconductor material for future high-power electronic devices manufacture. However, this material suffers from a low lattice thermal conductivity and advanced thermal management approaches such as heteroepitaxial growth of $Ga_{2}O_{3}$ on substrate with high thermal conductivity, e.g. SiC are needed. Here, we report on growth and structural characterization of monoclinic $\beta-Ga_{2}O_{3}$ deposited on semi-insulating 4H-SiC substrates using liquid-injection metal-organic chemical vapor deposition (LI-MOCVD). As deduced form X-ray diffraction and transmission electron microscopy, 120-nm thick phase-pure $\beta-Ga_{2}O_{3}$ shows highly-textured granular crystal structure with six mutually rotated orientation variants and root-mean-square surface roughness of 8 nm. We also manufactured depletion-mode MOSFET devices with $Al_{2}O_{3}$ gate dielectric grown by atomic layer deposition method