从原子第一性原理分析短通道量子输运的可变性

Q. Shi, Hong Guo, Yin Wang, Eric Zhu, Leo Liu
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引用次数: 6

摘要

由于随机杂质波动,器件间的可变性是新兴纳米电子学面临的严峻挑战。在这项工作中,我们提出了从原子第一原理预测量子输运变异性的理论形式及其数值实现。我们的方法被命名为非平衡相干势近似(NECPA),它可以应用于预测传输系数的平均值和方差,从而可以预测由于随机杂质引起的波动,而无需冗长的无序组态系综的蛮力计算。作为一个例子,我们定量分析了掺入不同浓度的硼杂质原子后,硅纳米场缺陷晶体管通道在6.5 ~ 15.2 nm范围内的脱态隧道电导变化。可变性被预测为掺杂浓度、通道长度和掺杂位置的函数。从隧道势垒中势分布的微观细节来理解器件的物理特性。其他系统也将作为例子提出。
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Analyzing variability in short-channel quantum transport from atomistic first principles
Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this work we present a theoretical formalism and its numerical realization to predict quantum-transport variability from atomistic first principles. Our approach is named the non-equilibrium coherent-potential approximation (NECPA) which can be applied to predict both the average and the variance of the transmission coefficients such that fluctuations due to random impurities can be predicted without lengthy brute force computations of ensemble of disordered configurations. As an example, we quantitatively analyzed the off-state tunnel conductance variability in Si nanosized fieldeffect transistor channels with channel lengths ranging from 6.5 to 15.2 nm doped with different concentrations of boron impurity atoms. The variability is predicted as a function of the doping concentration, channel length, and the doping positions. The device physics is understood from the microscopic details of the potential profile in the tunnel barrier. Other systems will also be presented as examples.
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