{"title":"从原子第一性原理分析短通道量子输运的可变性","authors":"Q. Shi, Hong Guo, Yin Wang, Eric Zhu, Leo Liu","doi":"10.1109/IWCE.2015.7301983","DOIUrl":null,"url":null,"abstract":"Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this work we present a theoretical formalism and its numerical realization to predict quantum-transport variability from atomistic first principles. Our approach is named the non-equilibrium coherent-potential approximation (NECPA) which can be applied to predict both the average and the variance of the transmission coefficients such that fluctuations due to random impurities can be predicted without lengthy brute force computations of ensemble of disordered configurations. As an example, we quantitatively analyzed the off-state tunnel conductance variability in Si nanosized fieldeffect transistor channels with channel lengths ranging from 6.5 to 15.2 nm doped with different concentrations of boron impurity atoms. The variability is predicted as a function of the doping concentration, channel length, and the doping positions. The device physics is understood from the microscopic details of the potential profile in the tunnel barrier. Other systems will also be presented as examples.","PeriodicalId":165023,"journal":{"name":"2015 International Workshop on Computational Electronics (IWCE)","volume":"31 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"2015-06-12","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"6","resultStr":"{\"title\":\"Analyzing variability in short-channel quantum transport from atomistic first principles\",\"authors\":\"Q. Shi, Hong Guo, Yin Wang, Eric Zhu, Leo Liu\",\"doi\":\"10.1109/IWCE.2015.7301983\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this work we present a theoretical formalism and its numerical realization to predict quantum-transport variability from atomistic first principles. Our approach is named the non-equilibrium coherent-potential approximation (NECPA) which can be applied to predict both the average and the variance of the transmission coefficients such that fluctuations due to random impurities can be predicted without lengthy brute force computations of ensemble of disordered configurations. As an example, we quantitatively analyzed the off-state tunnel conductance variability in Si nanosized fieldeffect transistor channels with channel lengths ranging from 6.5 to 15.2 nm doped with different concentrations of boron impurity atoms. The variability is predicted as a function of the doping concentration, channel length, and the doping positions. The device physics is understood from the microscopic details of the potential profile in the tunnel barrier. Other systems will also be presented as examples.\",\"PeriodicalId\":165023,\"journal\":{\"name\":\"2015 International Workshop on Computational Electronics (IWCE)\",\"volume\":\"31 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"2015-06-12\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"6\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"2015 International Workshop on Computational Electronics (IWCE)\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/IWCE.2015.7301983\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"2015 International Workshop on Computational Electronics (IWCE)","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/IWCE.2015.7301983","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
Analyzing variability in short-channel quantum transport from atomistic first principles
Due to random impurity fluctuations, the device-to-device variability is a serious challenge to emerging nanoelectronics. In this work we present a theoretical formalism and its numerical realization to predict quantum-transport variability from atomistic first principles. Our approach is named the non-equilibrium coherent-potential approximation (NECPA) which can be applied to predict both the average and the variance of the transmission coefficients such that fluctuations due to random impurities can be predicted without lengthy brute force computations of ensemble of disordered configurations. As an example, we quantitatively analyzed the off-state tunnel conductance variability in Si nanosized fieldeffect transistor channels with channel lengths ranging from 6.5 to 15.2 nm doped with different concentrations of boron impurity atoms. The variability is predicted as a function of the doping concentration, channel length, and the doping positions. The device physics is understood from the microscopic details of the potential profile in the tunnel barrier. Other systems will also be presented as examples.