E. Goutain, J. Renaud, M. Krakowski, G. Glastre, D. Rondi, R. Blondeau
{"title":"1.55 /spl mu/m MQW-DFB调q双段激光器，用于产生高频短脉冲","authors":"E. Goutain, J. Renaud, M. Krakowski, G. Glastre, D. Rondi, R. Blondeau","doi":"10.1109/ICIPRM.1996.492409","DOIUrl":null,"url":null,"abstract":"The generation of short optical pulses at 1.55 /spl mu/m with a high frequency repetition is of great interest for future optical communication systems as Optical Time Division Multiplexed (OTDM) systems. Such sources have been widely investigated but most of the techniques (active, passive and hybrid modelocking...) are often limited by a low output optical power and a small tunability of the repetition rate. To overcome these limitations and to allow a flexible soliton transmission, we developed a two-section MQW-DFB laser diode structure based on the Q-switching effect. The two-segment configuration consists of a long length (gain section) combined to a short length (saturable absorber section). The gain section is biased in a CW forward mode while a modulated voltage, around a value lower than the built-in voltage (0.8 V for 1.53 /spl mu/m), is applied to the saturable absorber. The LD fabrication and characteristics are discussed.","PeriodicalId":268278,"journal":{"name":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","volume":"89 1","pages":"0"},"PeriodicalIF":0.0000,"publicationDate":"1996-04-21","publicationTypes":"Journal Article","fieldsOfStudy":null,"isOpenAccess":false,"openAccessPdf":"","citationCount":"0","resultStr":"{\"title\":\"1.55 /spl mu/m MQW-DFB Q-switch two-section laser for high frequency-short pulse generation\",\"authors\":\"E. Goutain, J. Renaud, M. Krakowski, G. Glastre, D. Rondi, R. Blondeau\",\"doi\":\"10.1109/ICIPRM.1996.492409\",\"DOIUrl\":null,\"url\":null,\"abstract\":\"The generation of short optical pulses at 1.55 /spl mu/m with a high frequency repetition is of great interest for future optical communication systems as Optical Time Division Multiplexed (OTDM) systems. Such sources have been widely investigated but most of the techniques (active, passive and hybrid modelocking...) are often limited by a low output optical power and a small tunability of the repetition rate. To overcome these limitations and to allow a flexible soliton transmission, we developed a two-section MQW-DFB laser diode structure based on the Q-switching effect. The two-segment configuration consists of a long length (gain section) combined to a short length (saturable absorber section). The gain section is biased in a CW forward mode while a modulated voltage, around a value lower than the built-in voltage (0.8 V for 1.53 /spl mu/m), is applied to the saturable absorber. The LD fabrication and characteristics are discussed.\",\"PeriodicalId\":268278,\"journal\":{\"name\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"volume\":\"89 1\",\"pages\":\"0\"},\"PeriodicalIF\":0.0000,\"publicationDate\":\"1996-04-21\",\"publicationTypes\":\"Journal Article\",\"fieldsOfStudy\":null,\"isOpenAccess\":false,\"openAccessPdf\":\"\",\"citationCount\":\"0\",\"resultStr\":null,\"platform\":\"Semanticscholar\",\"paperid\":null,\"PeriodicalName\":\"Proceedings of 8th International Conference on Indium Phosphide and Related Materials\",\"FirstCategoryId\":\"1085\",\"ListUrlMain\":\"https://doi.org/10.1109/ICIPRM.1996.492409\",\"RegionNum\":0,\"RegionCategory\":null,\"ArticlePicture\":[],\"TitleCN\":null,\"AbstractTextCN\":null,\"PMCID\":null,\"EPubDate\":\"\",\"PubModel\":\"\",\"JCR\":\"\",\"JCRName\":\"\",\"Score\":null,\"Total\":0}","platform":"Semanticscholar","paperid":null,"PeriodicalName":"Proceedings of 8th International Conference on Indium Phosphide and Related Materials","FirstCategoryId":"1085","ListUrlMain":"https://doi.org/10.1109/ICIPRM.1996.492409","RegionNum":0,"RegionCategory":null,"ArticlePicture":[],"TitleCN":null,"AbstractTextCN":null,"PMCID":null,"EPubDate":"","PubModel":"","JCR":"","JCRName":"","Score":null,"Total":0}
引用次数: 0
摘要
产生频率为1.55 /spl μ m /m的高重复短光脉冲对于光时分复用(OTDM)等未来光通信系统具有重要意义。这类光源已经得到了广泛的研究，但大多数技术(主动、被动和混合模型锁定…)往往受到输出光功率低和重复率可调性小的限制。为了克服这些限制并允许灵活的孤子传输，我们开发了基于q开关效应的两段MQW-DFB激光二极管结构。两段结构包括一个长长度(增益部分)和一个短长度(可饱和吸收部分)。增益部分以连续波正向模式偏置，同时在可饱和吸收器上施加一个约低于内置电压(1.53 /spl mu/m时0.8 V)的调制电压。讨论了LD的制备方法和特点。
1.55 /spl mu/m MQW-DFB Q-switch two-section laser for high frequency-short pulse generation
The generation of short optical pulses at 1.55 /spl mu/m with a high frequency repetition is of great interest for future optical communication systems as Optical Time Division Multiplexed (OTDM) systems. Such sources have been widely investigated but most of the techniques (active, passive and hybrid modelocking...) are often limited by a low output optical power and a small tunability of the repetition rate. To overcome these limitations and to allow a flexible soliton transmission, we developed a two-section MQW-DFB laser diode structure based on the Q-switching effect. The two-segment configuration consists of a long length (gain section) combined to a short length (saturable absorber section). The gain section is biased in a CW forward mode while a modulated voltage, around a value lower than the built-in voltage (0.8 V for 1.53 /spl mu/m), is applied to the saturable absorber. The LD fabrication and characteristics are discussed.
京公网安备 11010802042870号
京ICP备2023020795号-1
分享
求助内容：
应助结果提醒方式：
扫码关注我们
