基于先进工艺技术的局部FIB延迟

Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA) Pub Date : 2014-09-18 DOI:10.1109/IPFA.2014.6898144

D. Donnet, O. Sidorov, P. Carleson, C. Rue, R. Alvis, S. Madala

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引用次数: 0

摘要

为了在FIB中实现先进工艺技术的均匀分层，需要对光束和化学条件进行良好的控制。更新、更薄、对光束更敏感的材料的引入使得分层变得更加复杂。我们将介绍一种用于器件分层的新化学方法，并介绍来自Ga和Xe离子束的结果，显示其优于现有化学方法。

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Localized FIB delayering on advanced process technologies

Good control over beam and chemistry conditions are required to enable uniform delayering of advanced process technologies in the FIB. The introduction of newer, thinner and more beam sensitive materials have made delayering more complicated. We shall introduce a new chemistry for device delayering and present results from both Ga and Xe ion beams showing its improvement over existing chemistries.

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Proceedings of the 21th International Symposium on the Physical and Failure Analysis of Integrated Circuits (IPFA)

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