快闪记忆电池隧道氧化物中场致电子陷阱的产生

2015 IEEE International Integrated Reliability Workshop (IIRW) Pub Date : 2015-10-01 DOI:10.1109/IIRW.2015.7437077

Y. Tkachev

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引用次数: 3

摘要

分析了SuperFlash存储单元隧道氧化物中陷阱产生和电子捕获的过程。SuperFlash电池中电场的强烈非均匀分布使我们排除了与电子或空穴相关的陷阱产生机制。单阱诱导隧道速率调制的实验结果，以及隧道氧化物中场和电位分布的分析，指出高电场是电子阱产生的直接原因。

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Field-induced generation of electron traps in the tunnel oxide of flash memory cells

The processes of trap generation and electron trapping in the tunnel oxide of SuperFlash memory cells have been analyzed. The strongly non-uniform distribution of electric field in the SuperFlash cell allowed us to rule out the electron- or hole-related mechanisms of trap generation. The experimental results of single-trap-induced modulation of the tunneling rate, and the analysis of field and potential distribution in the tunnel oxide, point to the high electric field as a direct cause of electron-trap generation.

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2015 IEEE International Integrated Reliability Workshop (IIRW)

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